SIMULATION OF 90nm NMOS USING VISUAL TCAD TOOL
1Palvinder Singh and 2Manu Bharti
1,2ECE Department, BGIET Sangrur. Email: Palvinder4us2006@gmail.com, firstname.lastname@example.org
Abstract: The IC industry is continuing to follow Moore’s Law by rapidly scaling CMOS technology into the deep submicron regime, resulting in increased chip speed, decreased power dissipation per function, increased transistor and function density, and lower cost per function. Industry-standard TCAD software packages are widely used by semiconductor Companies to optimise processes and devices in integrated circuits simulation. In this paper, first an accurate model for I-V characteristics of 90nm MOSFET is proposed. Constant field scaling is applied to the following parameters: the effective channel length, the density of the ion implantation for threshold voltage Vth adjustment, and gate thickness (Tox). Additional techniques is implemented to avoid short channel effects in submicron devices are shallow trench isolation(STI), sidewall spacer deposition, lightly doped drain(LDD)implantation, and retrograde well implantation . The result shows that LDD implantation allowed the highest density of the dopant to fall below the surface of the substrate. With application of LDD implantation ,a lighter doped region is created beyond the n+ drain/source junction and it is observed that drain current(ID) increased as well. The important parameters for NMOS are measured and validated. A 90nm is simulated using Visual TCAD and GENIUS simulator.
Keywords: Doping, Level 1 Drift-Diffusion, Light Doped Drain, Mesh, Visual TCAD
International eJournal of Mathematics and Engineering
Volume 4, Issue 2, Pages: 2126 - 2134